TOPCon (Tunnel Oxide Passivated Contact) technology places an ultra-thin oxide layer between the silicon and metal contact, dramatically reducing recombination losses.

• Tunnel Oxide Passivation : An ultra-thin (~1.5nm) silicon oxide layer passivates the rear surface, suppressing recombination and allowing only majority carriers to tunnel through boosting Voc significantly.
• N-Type Silicon Base : N-type wafers have lower impurity sensitivity and zero Light-Induced Degradation (LID), ensuring stable long-term power output vs. conventional PERC.
• Lower Temperature Coefficient : TopCon panels lose less power in high heat critical for Indian rooftop conditions. Temperature coefficient of just -0.29%/°C vs PERC's -0.35%/°C.
• Bifacial Capability : Dual-glass construction with an advanced anti-reflective coating maximizes light transmission and allows rear-side energy capture from reflected albedo light, adding up to 15-25% additional generation with minimal extra cost.